Understanding and Simulating n-InAs in Device Simulations

Dragoj, thank you for the question. Although I am primarily focused on device and circuit simulations, I will provide my insights based on the information you've shared.

Introduction to n-InAs Doping

The process of doping n-InAs (indium arsenide) involves introducing a specific concentration of n-type impurities to create a conductive layer. This can be done with various concentrations:

N moderately doped: 1015 to 1018 atoms/cm3 N heavily doped: 1019 to 1022 atoms/cm3

Please note that the method of doping can vary across different simulation tools, such as Synopsys Sentaurus-Process.

Choosing the Right Simulation Tool

Your choice of simulation software depends on the level of detail required for your project.

Using Sentaurus-Process for Detailed Process Steps

If you are looking to simulate the detailed process steps for forming n-InAs in a device simulator, tools like Sentaurus-Process from Synopsys are your best option. Sentaurus-Process can be quite complex, requiring a comprehensive understanding of process steps including temperature, current density, and diffusion rates.

However, if your goal is to simulate the device itself (i.e., Sentaurus Device), you might want to take a different approach. Sentaurus-Structure Editor can be used to emulate the processing steps without the need for detailed simulations, which can be more time-efficient.

Simulating n-InAs Layers

For a simpler approach, you can use a conducting layer with a reasonable resistivity or conductivity. This can save you a lot of time, especially if you are focusing on conducting properties rather than the full process steps.

Alternative Simulations

If you need to simulate the process steps, you can refer to the work by Benjamin S. White on InAs diodes fabricated using Be ion implantation. This paper provides detailed information on the processing steps and conditions used in the fabrication of InAs diodes. Additionally, the TRIM (Transport of Ions in Matter) computer program can be used as a part of the Stopping and Range of Ions in Matter (SRIM) software, which is a freeware tool. These resources can help you understand the ion implantation process and its subsequent effects on the material.

Further Reading and Simulations

Sachin Yadav et al. provide a comprehensive study on Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate. This work can be a valuable resource for understanding the fabrication process and identifying the necessary processed steps and conditions. You can follow the approach used by Yadav et al. to design your device structure.

Conclusion

In summary, the choice of simulation tool and the level of detail required depend on your specific needs. If you are looking for a simplified approach, consider using a conducting layer with a reasonable resistivity. For detailed process steps, refer to the resources mentioned above, such as the papers by White and Yadav, and the TRIM software. Good luck with your simulations!